MMBT6427LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
40V
Ic Max
500mA
Pd Max
225mW
hFE Gain
20000

Quick Reference

The MMBT6427LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 40V breakdown voltage and 500mA continuous collector current. Download the MMBT6427LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic500mACollector current
Pd225mWPower dissipation
DC Current Gain20000hFE / Beta
Frequency-Transition speed (fT)
VCEsat1.5VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
FMMT415TD NPN SOT-23 100V 500mA 500mW