MMBT6427-7-F Transistor Datasheet & Specifications

NPN SOT-23 General Purpose DIODES
VCEO
40V
Ic Max
500mA
Pd Max
300mW
hFE Gain
20000

Quick Reference

The MMBT6427-7-F is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 500mA continuous collector current. Download the MMBT6427-7-F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain20000hFE / Beta
Frequency-Transition speed (fT)
VCEsat1.5V@50mA,0.5mASaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW
FMMT415TD NPN SOT-23 100V 500mA 500mW