MMBT5401LT1G-CN Transistor Datasheet & Specifications

PNP SOT-23 General Purpose ChipNobo
VCEO
150V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300

Quick Reference

The MMBT5401LT1G-CN is a PNP bipolar transistor in a SOT-23 package by ChipNobo. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the MMBT5401LT1G-CN datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerChipNoboOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO150VBreakdown voltage
Ic600mACollector current
Pd300mWPower dissipation
DC Current Gain300hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT5401-7-F PNP SOT-23 150V 600mA 310mW
MMBT5401(RANGE:200-300) PNP SOT-23 150V 600mA 300mW
MMBT5401-TP PNP SOT-23 150V 600mA 300mW
MMBT5401 PNP SOT-23 160V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT5401S PNP SOT-23 150V 600mA 300mW
PBHV9115T,215 PNP SOT-23 150V 1A 300mW
MMBT5401(RANGE:100-200) PNP SOT-23 150V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW