PBHV9115T,215 Transistor Datasheet & Specifications
PNP
SOT-23
General Purpose
Nexperia
VCEO
150V
Ic Max
1A
Pd Max
300mW
hFE Gain
100
Quick Reference
The PBHV9115T,215 is a PNP bipolar transistor in a SOT-23 package by Nexperia. This datasheet provides complete specifications including 150V breakdown voltage and 1A continuous collector current. Download the PBHV9115T,215 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 115MHz | Transition speed (fT) |
| VCEsat | 60mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |