MMBT5401 Transistor Datasheet & Specifications
PNP
SOT-23
General Purpose
R+O
VCEO
160V
Ic Max
600mA
Pd Max
300mW
hFE Gain
100
Quick Reference
The MMBT5401 is a PNP bipolar transistor in a SOT-23 package by R+O. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMBT5401 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT5401-B | PNP | SOT-23 | 160V | 600mA | 300mW |
| 2N5401S | PNP | SOT-23 | 160V | 600mA | 300mW |