2N5401S Transistor Datasheet & Specifications
PNP
SOT-23
General Purpose
TECH PUBLIC
VCEO
160V
Ic Max
600mA
Pd Max
300mW
hFE Gain
300
Quick Reference
The 2N5401S is a PNP bipolar transistor in a SOT-23 package by TECH PUBLIC. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the 2N5401S datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT5401 | PNP | SOT-23 | 160V | 600mA | 300mW |
| MMBT5401-B | PNP | SOT-23 | 160V | 600mA | 300mW |