MMBT5401 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose BORN
VCEO
150V
Ic Max
600mA
Pd Max
300mW
hFE Gain
80

Quick Reference

The MMBT5401 is a PNP bipolar transistor in a SOT-23 package by BORN. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the MMBT5401 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerBORNOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO150VBreakdown voltage
Ic600mACollector current
Pd300mWPower dissipation
DC Current Gain80hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT5401-7-F PNP SOT-23 150V 600mA 310mW
MMBT5401(RANGE:200-300) PNP SOT-23 150V 600mA 300mW
MMBT5401-TP PNP SOT-23 150V 600mA 300mW
MMBT5401 PNP SOT-23 160V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBT5401S PNP SOT-23 150V 600mA 300mW
PBHV9115T,215 PNP SOT-23 150V 1A 300mW
MMBT5401(RANGE:100-200) PNP SOT-23 150V 600mA 300mW
MMBT5401 PNP SOT-23 150V 600mA 300mW