MJE182 Transistor Datasheet & Specifications

NPN TO-126 High Power GOODWORK
VCEO
80V
Ic Max
3A
Pd Max
12.5W
hFE Gain
250

Quick Reference

The MJE182 is a NPN bipolar transistor in a TO-126 package by GOODWORK. This datasheet provides complete specifications including 80V breakdown voltage and 3A continuous collector current. Download the MJE182 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGOODWORKOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic3ACollector current
Pd12.5WPower dissipation
DC Current Gain250hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BD237STU-HXY NPN TO-126 100V 15A 1W
BD681 NPN TO-126 100V 4A 2W
3DD4244DM NPN TO-126 400V 3A 60W
BD441 NPN TO-126 80V 4A 25W
BD681 NPN TO-126 100V 4A 40W