KTD1302-AT/P Transistor Datasheet & Specifications

NPN TO-92-3 General Purpose KEC
VCEO
20V
Ic Max
300mA
Pd Max
625mW
hFE Gain
200

Quick Reference

The KTD1302-AT/P is a NPN bipolar transistor in a TO-92-3 package by KEC. This datasheet provides complete specifications including 20V breakdown voltage and 300mA continuous collector current. Download the KTD1302-AT/P datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerKECOriginal Manufacturer
PackageTO-92-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic300mACollector current
Pd625mWPower dissipation
DC Current Gain200hFE / Beta
Frequency60MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo12VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2N4401TFR NPN TO-92-3 40V 600mA 625mW
ZTX458STZ NPN TO-92-3 400V 300mA 1W
MPSA44G-T92-A-B NPN TO-92-3 400V 300mA 625mW
2SD667A-C NPN TO-92-3 100V 1A 900mW
KTC1027-Y-AT/P NPN TO-92-3 120V 800mA 1W
BC337 NPN TO-92-3 45V 800mA 625mW
KSC1008YBU NPN TO-92-3 60V 700mA 800mW
BC33725TA NPN TO-92-3 45V 800mA 625mW
ZTX455STZ NPN TO-92-3 140V 1A 1W
2SD1616AG-G-T92-K NPN TO-92-3 60V 1A 750mW