KSC1008YBU Transistor Datasheet & Specifications
NPN
TO-92-3
General Purpose
onsemi
VCEO
60V
Ic Max
700mA
Pd Max
800mW
hFE Gain
120
Quick Reference
The KSC1008YBU is a NPN bipolar transistor in a TO-92-3 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 700mA continuous collector current. Download the KSC1008YBU datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-92-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 700mA | Collector current |
| Pd | 800mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SD667A-C | NPN | TO-92-3 | 100V | 1A | 900mW |
| KTC1027-Y-AT/P | NPN | TO-92-3 | 120V | 800mA | 1W |
| ZTX455STZ | NPN | TO-92-3 | 140V | 1A | 1W |
| 2SD1616AG-G-T92-K | NPN | TO-92-3 | 60V | 1A | 750mW |
| KSC2383OTA | NPN | TO-92-3 | 160V | 1A | 900mW |