KTC1027-Y-AT/P Transistor Datasheet & Specifications
NPN
TO-92-3
General Purpose
KEC
VCEO
120V
Ic Max
800mA
Pd Max
1W
hFE Gain
80
Quick Reference
The KTC1027-Y-AT/P is a NPN bipolar transistor in a TO-92-3 package by KEC. This datasheet provides complete specifications including 120V breakdown voltage and 800mA continuous collector current. Download the KTC1027-Y-AT/P datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | KEC | Original Manufacturer |
| Package | TO-92-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 120V | Breakdown voltage |
| Ic | 800mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 120MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZTX455STZ | NPN | TO-92-3 | 140V | 1A | 1W |
| KSC2383OTA | NPN | TO-92-3 | 160V | 1A | 900mW |