ZTX458STZ Transistor Datasheet & Specifications
NPN
TO-92-3
General Purpose
DIODES
VCEO
400V
Ic Max
300mA
Pd Max
1W
hFE Gain
100
Quick Reference
The ZTX458STZ is a NPN bipolar transistor in a TO-92-3 package by DIODES. This datasheet provides complete specifications including 400V breakdown voltage and 300mA continuous collector current. Download the ZTX458STZ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-92-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 300mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+200℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MPSA44G-T92-A-B | NPN | TO-92-3 | 400V | 300mA | 625mW |