HMMDT39067F Transistor Datasheet & Specifications

PNP SOT-363 General Purpose HXY MOSFET
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
100

Quick Reference

The HMMDT39067F is a PNP bipolar transistor in a SOT-363 package by HXY MOSFET. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the HMMDT39067F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd200mWPower dissipation
DC Current Gain100hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MBT3906DW1T1G-HXY PNP SOT-363 40V 200mA 200mW
MMDT5401 PNP SOT-363 150V 200mA 200mW
MMDT3906 PNP SOT-363 40V 200mA 200mW
MMBT3906WH PNP SOT-363 40V 200mA 200mW
BCM857BS PNP SOT-363 45V 200mA 300mW
MMDT3906 PNP SOT-363 40V 200mA 200mW
TPMMDT5401 PNP SOT-363 150V 200mA 200mW
TPMMDT2907A PNP SOT-363 60V 600mA 200mW
BC857BS PNP SOT-363 45V 200mA 300mW
MMDT5401DW PNP SOT-363 150V 600mA 300mW