MBT3906DW1T1G-HXY Transistor Datasheet & Specifications
PNP
SOT-363
General Purpose
HXY MOSFET
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MBT3906DW1T1G-HXY is a PNP bipolar transistor in a SOT-363 package by HXY MOSFET. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MBT3906DW1T1G-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 250MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 200mW |
| MMBT3906WH | PNP | SOT-363 | 40V | 200mA | 200mW |
| BCM857BS | PNP | SOT-363 | 45V | 200mA | 300mW |
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 200mW |
| TPMMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| TPMMDT2907A | PNP | SOT-363 | 60V | 600mA | 200mW |
| BC857BS | PNP | SOT-363 | 45V | 200mA | 300mW |
| MMDT5401DW | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT3906DW | PNP | SOT-363 | 40V | 200mA | 200mW |