MMBT3906WH Transistor Datasheet & Specifications
PNP
SOT-363
General Purpose
Jingdao Microelectronics
VCEO
40V
Ic Max
200mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MMBT3906WH is a PNP bipolar transistor in a SOT-363 package by Jingdao Microelectronics. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906WH datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Jingdao Microelectronics | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MBT3906DW1T1G-HXY | PNP | SOT-363 | 40V | 200mA | 200mW |
| MMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 200mW |
| BCM857BS | PNP | SOT-363 | 45V | 200mA | 300mW |
| MMDT3906 | PNP | SOT-363 | 40V | 200mA | 200mW |
| TPMMDT5401 | PNP | SOT-363 | 150V | 200mA | 200mW |
| TPMMDT2907A | PNP | SOT-363 | 60V | 600mA | 200mW |
| BC857BS | PNP | SOT-363 | 45V | 200mA | 300mW |
| MMDT5401DW | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT3906DW | PNP | SOT-363 | 40V | 200mA | 200mW |