TPMMDT2907A Transistor Datasheet & Specifications
PNP
SOT-363
General Purpose
TECH PUBLIC
VCEO
60V
Ic Max
600mA
Pd Max
200mW
hFE Gain
75
Quick Reference
The TPMMDT2907A is a PNP bipolar transistor in a SOT-363 package by TECH PUBLIC. This datasheet provides complete specifications including 60V breakdown voltage and 600mA continuous collector current. Download the TPMMDT2907A datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 75 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5401DW | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT2907A | PNP | SOT-363 | 60V | 600mA | 200mW |
| MMDT5401 | PNP | SOT-363 | 150V | 600mA | 200mW |