MMDT5401 Transistor Datasheet & Specifications
PNP
SOT-363
General Purpose
YANGJIE
VCEO
150V
Ic Max
600mA
Pd Max
200mW
hFE Gain
50
Quick Reference
The MMDT5401 is a PNP bipolar transistor in a SOT-363 package by YANGJIE. This datasheet provides complete specifications including 150V breakdown voltage and 600mA continuous collector current. Download the MMDT5401 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 50 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5401DW | PNP | SOT-363 | 150V | 600mA | 300mW |
| MMDT5401 | PNP | SOT-363 | 150V | 600mA | 300mW |