HE8050G-D-AB3-R Transistor Datasheet & Specifications

NPN SOT-89 General Purpose UTC
VCEO
25V
Ic Max
1.5A
Pd Max
500mW
hFE Gain
160

Quick Reference

The HE8050G-D-AB3-R is a NPN bipolar transistor in a SOT-89 package by UTC. This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the HE8050G-D-AB3-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic1.5ACollector current
Pd500mWPower dissipation
DC Current Gain160hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
FCX690BTA NPN SOT-89 45V 2A 2W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
PBSS4330X,115 NPN SOT-89 30V 3A 1.6W
PBSS4350X,115 NPN SOT-89 50V 3A 1.6W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
2SC5566-TD-E NPN SOT-89 50V 4A 3.5W
2SCR553PT100 NPN SOT-89 50V 2A 2W