HBCP5316 Transistor Datasheet & Specifications

PNP SOT-223 General Purpose HXY MOSFET
VCEO
80V
Ic Max
1A
Pd Max
1.5W
hFE Gain
25

Quick Reference

The HBCP5316 is a PNP bipolar transistor in a SOT-223 package by HXY MOSFET. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the HBCP5316 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd1.5WPower dissipation
DC Current Gain25hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT955TA PNP SOT-223 140V 4A 3W
ZXTP2014GTA PNP SOT-223 140V 4A 3W
BCP53T1G PNP SOT-223 80V 1.5A 1.5W
FZT956TA PNP SOT-223 200V 2A 3W
BCP53-16 PNP SOT-223 80V 1A 1.5W
SBCP53-10T1G PNP SOT-223 80V 1.5A 1.5W
ZX5T955GTA PNP SOT-223 140V 4A 3W
BCP53-16 PNP SOT-223 80V 1A 1.5W
BCP53-10T1G PNP SOT-223 80V 1.5A 1.5W
FZT954 PNP SOT-223 100V 5A 800mW