DXT5551-13-HXY Transistor Datasheet & Specifications
NPN
SOT-89
General Purpose
HXY MOSFET
VCEO
160V
Ic Max
600mA
Pd Max
500mW
hFE Gain
300
Quick Reference
The DXT5551-13-HXY is a NPN bipolar transistor in a SOT-89 package by HXY MOSFET. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the DXT5551-13-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| DXT5551-13 | NPN | SOT-89 | 160V | 600mA | 1.2W |
| PXT5551 | NPN | SOT-89 | 160V | 600mA | 500mW |
| CXT5551 | NPN | SOT-89 | 160V | 600mA | 500mW |
| 2SC2383 | NPN | SOT-89 | 160V | 1A | 500mW |
| 2SC2383-JSM | NPN | SOT-89 | 160V | 1A | 500mW |
| CXT5551-JSM | NPN | SOT-89 | 160V | 600mA | 500mW |
| 2SD2211T100R | NPN | SOT-89 | 160V | 1.5A | 2W |
| 2SC2383 | NPN | SOT-89 | 160V | 1A | 500mW |
| 2SD669AG-C-AB3-R | NPN | SOT-89 | 160V | 1.5A | 500mW |
| 2N5551G-B-AB3-R | NPN | SOT-89 | 160V | 600mA | 500mW |