2SD2211T100R Transistor Datasheet & Specifications
NPN
SOT-89
General Purpose
ROHM
VCEO
160V
Ic Max
1.5A
Pd Max
2W
hFE Gain
120
Quick Reference
The 2SD2211T100R is a NPN bipolar transistor in a SOT-89 package by ROHM. This datasheet provides complete specifications including 160V breakdown voltage and 1.5A continuous collector current. Download the 2SD2211T100R datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 2W | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | 1.2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SD669AG-C-AB3-R | NPN | SOT-89 | 160V | 1.5A | 500mW |