DXT5551-13 Transistor Datasheet & Specifications

NPN SOT-89 General Purpose DIODES
VCEO
160V
Ic Max
600mA
Pd Max
1.2W
hFE Gain
80

Quick Reference

The DXT5551-13 is a NPN bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the DXT5551-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic600mACollector current
Pd1.2WPower dissipation
DC Current Gain80hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
PXT5551 NPN SOT-89 160V 600mA 500mW
CXT5551 NPN SOT-89 160V 600mA 500mW
2SC2383 NPN SOT-89 160V 1A 500mW
2SC2383-JSM NPN SOT-89 160V 1A 500mW
CXT5551-JSM NPN SOT-89 160V 600mA 500mW
2SD2211T100R NPN SOT-89 160V 1.5A 2W
2SC2383 NPN SOT-89 160V 1A 500mW
2SD669AG-C-AB3-R NPN SOT-89 160V 1.5A 500mW
2N5551G-B-AB3-R NPN SOT-89 160V 600mA 500mW
HCXT5551 NPN SOT-89 160V 600mA 500mW