CXT5551 Transistor Datasheet & Specifications

NPN SOT-89 General Purpose MSKSEMI
VCEO
160V
Ic Max
600mA
Pd Max
500mW
hFE Gain
120

Quick Reference

The CXT5551 is a NPN bipolar transistor in a SOT-89 package by MSKSEMI. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the CXT5551 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic600mACollector current
Pd500mWPower dissipation
DC Current Gain120hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DXT5551-13 NPN SOT-89 160V 600mA 1.2W
PXT5551 NPN SOT-89 160V 600mA 500mW
2SC2383 NPN SOT-89 160V 1A 500mW
2SC2383-JSM NPN SOT-89 160V 1A 500mW
CXT5551-JSM NPN SOT-89 160V 600mA 500mW
2SD2211T100R NPN SOT-89 160V 1.5A 2W
2SC2383 NPN SOT-89 160V 1A 500mW
2SD669AG-C-AB3-R NPN SOT-89 160V 1.5A 500mW
2N5551G-B-AB3-R NPN SOT-89 160V 600mA 500mW
HCXT5551 NPN SOT-89 160V 600mA 500mW