DXT3906-13 Transistor Datasheet & Specifications

PNP SOT-89-3L General Purpose DIODES
VCEO
40V
Ic Max
200mA
Pd Max
1W
hFE Gain
100

Quick Reference

The DXT3906-13 is a PNP bipolar transistor in a SOT-89-3L package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the DXT3906-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89-3LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic200mACollector current
Pd1WPower dissipation
DC Current Gain100hFE / Beta
Frequency250MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DXT751-13 PNP SOT-89-3L 60V 3A 1W
BCX53-16(RANGE:100-250) PNP SOT-89-3L 80V 1A 500mW
CXT5401 PNP SOT-89-3L 150V 500mA 500mW
2SA1661 PNP SOT-89-3L 120V 800mA 500mW
A1013Y-2AF PNP SOT-89-3L 160V 1A 500mW
2SA1013(RANGE:160-320) PNP SOT-89-3L 160V 1A 500mW
BCX53(RANGE:63-250) PNP SOT-89-3L 80V 1A 500mW
2SB1561 PNP SOT-89-3L 60V 3A 2W
DXT751 PNP SOT-89-3L 60V 3A 1W
2SB1189(RANGE:180-390) PNP SOT-89-3L 80V 700mA 500mW