2SB1189(RANGE:180-390) Transistor Datasheet & Specifications

PNP SOT-89-3L General Purpose JSCJ
VCEO
80V
Ic Max
700mA
Pd Max
500mW
hFE Gain
82

Quick Reference

The 2SB1189(RANGE:180-390) is a PNP bipolar transistor in a SOT-89-3L package by JSCJ. This datasheet provides complete specifications including 80V breakdown voltage and 700mA continuous collector current. Download the 2SB1189(RANGE:180-390) datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-89-3LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic700mACollector current
Pd500mWPower dissipation
DC Current Gain82hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX53-16(RANGE:100-250) PNP SOT-89-3L 80V 1A 500mW
2SA1661 PNP SOT-89-3L 120V 800mA 500mW
A1013Y-2AF PNP SOT-89-3L 160V 1A 500mW
2SA1013(RANGE:160-320) PNP SOT-89-3L 160V 1A 500mW
BCX53(RANGE:63-250) PNP SOT-89-3L 80V 1A 500mW
2SA1013Y-2AF PNP SOT-89-3L 160V 1A 500mW
2SA1201 PNP SOT-89-3L 120V 800mA 500mW
DCX53-16-13 PNP SOT-89-3L 80V 1A 1W