2SA1201 Transistor Datasheet & Specifications

PNP SOT-89-3L General Purpose HT(Shenzhen Jinyu Semicon)
VCEO
120V
Ic Max
800mA
Pd Max
500mW
hFE Gain
-

Quick Reference

The 2SA1201 is a PNP bipolar transistor in a SOT-89-3L package by HT(Shenzhen Jinyu Semicon). This datasheet provides complete specifications including 120V breakdown voltage and 800mA continuous collector current. Download the 2SA1201 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageSOT-89-3LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic800mACollector current
Pd500mWPower dissipation
DC Current Gain-hFE / Beta
Frequency120MHzTransition speed (fT)
VCEsat240@100mA,5VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SA1661 PNP SOT-89-3L 120V 800mA 500mW
A1013Y-2AF PNP SOT-89-3L 160V 1A 500mW
2SA1013(RANGE:160-320) PNP SOT-89-3L 160V 1A 500mW
2SA1013Y-2AF PNP SOT-89-3L 160V 1A 500mW