A1013Y-2AF Transistor Datasheet & Specifications
PNP
SOT-89-3L
General Purpose
FOSAN
VCEO
160V
Ic Max
1A
Pd Max
500mW
hFE Gain
320
Quick Reference
The A1013Y-2AF is a PNP bipolar transistor in a SOT-89-3L package by FOSAN. This datasheet provides complete specifications including 160V breakdown voltage and 1A continuous collector current. Download the A1013Y-2AF datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | FOSAN | Original Manufacturer |
| Package | SOT-89-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 320 | hFE / Beta |
| Frequency | 15MHz | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SA1013(RANGE:160-320) | PNP | SOT-89-3L | 160V | 1A | 500mW |
| 2SA1013Y-2AF | PNP | SOT-89-3L | 160V | 1A | 500mW |