DXT751-13 Transistor Datasheet & Specifications
PNP
SOT-89-3L
General Purpose
DIODES
VCEO
60V
Ic Max
3A
Pd Max
1W
hFE Gain
100
Quick Reference
The DXT751-13 is a PNP bipolar transistor in a SOT-89-3L package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 3A continuous collector current. Download the DXT751-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89-3L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 145MHz | Transition speed (fT) |
| VCEsat | 80mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |