CXT2222ATR-HXY Transistor Datasheet & Specifications

NPN SOT-89 General Purpose HXY MOSFET
VCEO
40V
Ic Max
600mA
Pd Max
500mW
hFE Gain
300

Quick Reference

The CXT2222ATR-HXY is a NPN bipolar transistor in a SOT-89 package by HXY MOSFET. This datasheet provides complete specifications including 40V breakdown voltage and 600mA continuous collector current. Download the CXT2222ATR-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO40VBreakdown voltage
Ic600mACollector current
Pd500mWPower dissipation
DC Current Gain300hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current10nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX56-16,115 NPN SOT-89 80V 1A 1.35W
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
BCX56-16 NPN SOT-89 80V 1A 1.3W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
FCX690BTA NPN SOT-89 45V 2A 2W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
PBSS4350X,115 NPN SOT-89 50V 3A 1.6W
BCX56,115 NPN SOT-89 80V 1A 1.35W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W