BSP52T1G Transistor Datasheet & Specifications

NPN SOT-223 General Purpose onsemi
VCEO
80V
Ic Max
1A
Pd Max
800mW
hFE Gain
2000

Quick Reference

The BSP52T1G is a NPN bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the BSP52T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd800mWPower dissipation
DC Current Gain2000hFE / Beta
Frequency-Transition speed (fT)
VCEsat1.3VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT857TA NPN SOT-223 300V 3.5A 3W
BCP56-16,115 NPN SOT-223 80V 1A 1.35W
FZT855TA NPN SOT-223 150V 5A 3W
FZT493TA NPN SOT-223 100V 1A 3W
BCP5616QTA NPN SOT-223 80V 1A 2W
BCP5616TA NPN SOT-223 80V 1A 2W
FZT653TA NPN SOT-223 100V 2A 3W
DXT13003DG-13 NPN SOT-223 450V 1.5A 3W
BCP56TA NPN SOT-223 80V 1A 2W
BCP56-16T1G NPN SOT-223 80V 1A 1.5W