BCX70GE6327-HXY Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
HXY MOSFET
VCEO
50V
Ic Max
100mA
Pd Max
200mW
hFE Gain
600
Quick Reference
The BCX70GE6327-HXY is a NPN bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the BCX70GE6327-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 600 | hFE / Beta |
| Frequency | 250MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBTA05(RANGE:100-400) | NPN | SOT-23 | 60V | 500mA | 300mW |
| ZXTN2020FTA | NPN | SOT-23 | 100V | 4A | 1.2W |
| DN350T05-7 | NPN | SOT-23 | 350V | 500mA | 300mW |
| DNBT8105-7 | NPN | SOT-23 | 60V | 1A | 600mW |
| FMMT458TA | NPN | SOT-23 | 400V | 225mA | 500mW |
| MMBTA42 | NPN | SOT-23 | 200V | 500mA | 350mW |
| FMMT415TD | NPN | SOT-23 | 100V | 500mA | 500mW |
| FMMT493ATA | NPN | SOT-23 | 60V | 1A | 500mW |
| MMBTA42Q-7-F | NPN | SOT-23 | 300V | 500mA | 300mW |
| BC846AQ-7-F | NPN | SOT-23 | 65V | 100mA | 310mW |