BCW66H Transistor Datasheet & Specifications

NPN SOT-23 General Purpose LGE
VCEO
75V
Ic Max
800mA
Pd Max
330mW
hFE Gain
630

Quick Reference

The BCW66H is a NPN bipolar transistor in a SOT-23 package by LGE. This datasheet provides complete specifications including 75V breakdown voltage and 800mA continuous collector current. Download the BCW66H datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO75VBreakdown voltage
Ic800mACollector current
Pd330mWPower dissipation
DC Current Gain630hFE / Beta
Frequency170MHzTransition speed (fT)
VCEsat700mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current20nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT493TA NPN SOT-23 100V 1A 500mW
FMMT493 NPN SOT-23 100V 1A 500mW
FMMT495TA NPN SOT-23 150V 1A 500mW
FMMT624TA NPN SOT-23 125V 1A 625mW
FMMT493 NPN SOT-23 100V 1A 500mW
CMPT8099-HXY NPN SOT-23 100V 1A 250mW
FMMT411TA-HXY NPN SOT-23 100V 1A 250mW