BCP56-16T3G Transistor Datasheet & Specifications

NPN SOT-223 General Purpose onsemi
VCEO
80V
Ic Max
1A
Pd Max
1.5W
hFE Gain
250

Quick Reference

The BCP56-16T3G is a NPN bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the BCP56-16T3G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic1ACollector current
Pd1.5WPower dissipation
DC Current Gain250hFE / Beta
Frequency130MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT857TA NPN SOT-223 300V 3.5A 3W
BCP56-16,115 NPN SOT-223 80V 1A 1.35W
FZT855TA NPN SOT-223 150V 5A 3W
FZT493TA NPN SOT-223 100V 1A 3W
BCP5616QTA NPN SOT-223 80V 1A 2W
BCP5616TA NPN SOT-223 80V 1A 2W
FZT653TA NPN SOT-223 100V 2A 3W
DXT13003DG-13 NPN SOT-223 450V 1.5A 3W
BCP56TA NPN SOT-223 80V 1A 2W
BCP56-16T1G NPN SOT-223 80V 1A 1.5W