BC847B-7-F Transistor Datasheet & Specifications

NPN SOT-23 General Purpose DIODES
VCEO
45V
Ic Max
100mA
Pd Max
300mW
hFE Gain
200

Quick Reference

The BC847B-7-F is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847B-7-F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd300mWPower dissipation
DC Current Gain200hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current15nALeakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
S9014 NPN SOT-23 45V 100mA 200mW
FMMT415TD NPN SOT-23 100V 500mA 500mW