BC846B-TD Transistor Datasheet & Specifications

NPN SOT-23 General Purpose TDSEMIC
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
450

Quick Reference

The BC846B-TD is a NPN bipolar transistor in a SOT-23 package by TDSEMIC. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC846B-TD datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTDSEMICOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain450hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DN350T05-7 NPN SOT-23 350V 500mA 300mW
FMMT458TA NPN SOT-23 400V 225mA 500mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
FMMT415TD NPN SOT-23 100V 500mA 500mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
BC846AQ-7-F NPN SOT-23 65V 100mA 310mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
MMBTA42 NPN SOT-23 300V 300mA 350mW