BC817-40W Transistor Datasheet & Specifications

NPN SOT-323 General Purpose amsem
VCEO
65V
Ic Max
500mA
Pd Max
200mW
hFE Gain
250

Quick Reference

The BC817-40W is a NPN bipolar transistor in a SOT-323 package by amsem. This datasheet provides complete specifications including 65V breakdown voltage and 500mA continuous collector current. Download the BC817-40W datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureramsemOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic500mACollector current
Pd200mWPower dissipation
DC Current Gain250hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat700mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMST5551-JSM NPN SOT-323 160V 600mA 200mW
MMST5551 NPN SOT-323 160V 600mA 200mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
BC816-25WX-HXY NPN SOT-323 160V 600mA 200mW
MMBTA06WT1G-HXY NPN SOT-323 160V 600mA 200mW
PMST5551-HXY NPN SOT-323 160V 600nA 200mW
MMST5551(RANGE:100-300) NPN SOT-323 160V 600mA 200mW
MMSTA06Q-7-F NPN SOT-323 80V 500mA 200mW
MMSTA06-7-F NPN SOT-323 80V 500mA 200mW