MMSTA06-7-F Transistor Datasheet & Specifications

NPN SOT-323 General Purpose DIODES
VCEO
80V
Ic Max
500mA
Pd Max
200mW
hFE Gain
100

Quick Reference

The MMSTA06-7-F is a NPN bipolar transistor in a SOT-323 package by DIODES. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the MMSTA06-7-F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic500mACollector current
Pd200mWPower dissipation
DC Current Gain100hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMST5551-JSM NPN SOT-323 160V 600mA 200mW
MMST5551 NPN SOT-323 160V 600mA 200mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
BC816-25WX-HXY NPN SOT-323 160V 600mA 200mW
MMBTA06WT1G-HXY NPN SOT-323 160V 600mA 200mW
PMST5551-HXY NPN SOT-323 160V 600nA 200mW
MMST5551(RANGE:100-300) NPN SOT-323 160V 600mA 200mW
MMSTA06Q-7-F NPN SOT-323 80V 500mA 200mW