MMST5551(RANGE:100-300) Transistor Datasheet & Specifications

NPN SOT-323 General Purpose JSCJ
VCEO
160V
Ic Max
600mA
Pd Max
200mW
hFE Gain
100

Quick Reference

The MMST5551(RANGE:100-300) is a NPN bipolar transistor in a SOT-323 package by JSCJ. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMST5551(RANGE:100-300) datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic600mACollector current
Pd200mWPower dissipation
DC Current Gain100hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMST5551-JSM NPN SOT-323 160V 600mA 200mW
MMST5551 NPN SOT-323 160V 600mA 200mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
BC816-25WX-HXY NPN SOT-323 160V 600mA 200mW
MMBTA06WT1G-HXY NPN SOT-323 160V 600mA 200mW
PMST5551-HXY NPN SOT-323 160V 600nA 200mW