MMST5551 Transistor Datasheet & Specifications
NPN
SOT-323
General Purpose
R+O
VCEO
160V
Ic Max
600mA
Pd Max
200mW
hFE Gain
300
Quick Reference
The MMST5551 is a NPN bipolar transistor in a SOT-323 package by R+O. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the MMST5551 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMST5551-JSM | NPN | SOT-323 | 160V | 600mA | 200mW |
| MMSTA06-7-F-HXY | NPN | SOT-323 | 160V | 600nA | 200mW |
| BC816-25WX-HXY | NPN | SOT-323 | 160V | 600mA | 200mW |
| MMBTA06WT1G-HXY | NPN | SOT-323 | 160V | 600mA | 200mW |
| PMST5551-HXY | NPN | SOT-323 | 160V | 600nA | 200mW |
| MMST5551(RANGE:100-300) | NPN | SOT-323 | 160V | 600mA | 200mW |