50N03 MOSFET Datasheet & Specifications

N-Channel TO-252-3L Logic-Level HL
Vds Max
30V
Id Max
50A
Rds(on)
10mΩ@10V
Vgs(th)
2.5V

Quick Reference

The 50N03 is an N-Channel MOSFET in a TO-252-3L package, manufactured by HL. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHLOriginal Manufacturer
PackageTO-252-3LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)30.5WMax thermal limit
On-Resistance (Rds(on))10mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)19nC@10VSwitching energy
Input Capacitance (Ciss)1.011nFInternal gate capacitance
Output Capacitance (Coss)142pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TM100N03D N-Channel TO-252-3L 30V 100A 3.5mΩ@10V 1.5V
Tritech-MOS 📄 PDF
XRS150N04 N-Channel TO-252-3L 40V 150A 2.5mΩ@10V 1.5V
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XRS120N06 N-Channel TO-252-3L 60V 120A 3.6mΩ@10V 1.7V
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STD35NF06L N-Channel TO-252-3L 60V 50A 20mΩ@10V 2.5V
TECH PUBLIC 📄 PDF
XR80N07 N-Channel TO-252-3L 70V 80A 5.5mΩ@10V 3V
XNRUSEMI 📄 PDF
TMG80N10D N-Channel TO-252-3L 100V 80A 7.2mΩ@10V 2.5V
Tritech-MOS 📄 PDF
XR60N10L N-Channel TO-252-3L 100V 60A 17mΩ@10V 1.6V
XNRUSEMI 📄 PDF