TM100N03D MOSFET Datasheet & Specifications
N-Channel
TO-252-3L
Logic-Level
Tritech-MOS
Vds Max
30V
Id Max
100A
Rds(on)
3.5mΩ@10V
Vgs(th)
1.5V
Quick Reference
The TM100N03D is an N-Channel MOSFET in a TO-252-3L package, manufactured by Tritech-MOS. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Tritech-MOS | Original Manufacturer |
| Package | TO-252-3L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 52W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 23nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.956nF | Internal gate capacitance |
| Output Capacitance (Coss) | 55pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |