XRS150N04 MOSFET Datasheet & Specifications

N-Channel TO-252-3L Logic-Level XNRUSEMI
Vds Max
40V
Id Max
150A
Rds(on)
2.5mΩ@10V
Vgs(th)
1.5V

Quick Reference

The XRS150N04 is an N-Channel MOSFET in a TO-252-3L package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackageTO-252-3LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)72.3WMax thermal limit
On-Resistance (Rds(on))2.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)42.6nC@20VSwitching energy
Input Capacitance (Ciss)2.625nFInternal gate capacitance
Output Capacitance (Coss)560pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.