XR80N07 MOSFET Datasheet & Specifications
N-Channel
TO-252-3L
Logic-Level
XNRUSEMI
Vds Max
70V
Id Max
80A
Rds(on)
5.5mΩ@10V
Vgs(th)
3V
Quick Reference
The XR80N07 is an N-Channel MOSFET in a TO-252-3L package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 70V and a continuous drain current of 80A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | XNRUSEMI | Original Manufacturer |
| Package | TO-252-3L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 70V | Max breakdown voltage |
| Continuous Drain Current (Id) | 80A | Max current handling |
| Power Dissipation (Pd) | 136W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 76nC@34V | Switching energy |
| Input Capacitance (Ciss) | 4.723nF | Internal gate capacitance |
| Output Capacitance (Coss) | 225pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |