3DD303C Transistor Datasheet & Specifications

NPN TO-3 High Power SPTECH
VCEO
100V
Ic Max
3A
Pd Max
30W
hFE Gain
120

Quick Reference

The 3DD303C is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the 3DD303C datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic3ACollector current
Pd30WPower dissipation
DC Current Gain120hFE / Beta
Frequency-Transition speed (fT)
VCEsat1.5VSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current500uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJ15015G NPN TO-3 120V 15A 180W
MJ15024 NPN TO-3 250V 16A 250W
BDY58 NPN TO-3 125V 25A 175W
2N5631 NPN TO-3 140V 16A 200W
BD317 NPN TO-3 100V 16A 200W
MJ15026 NPN TO-3 200V 16A 250W
2SC1116 NPN TO-3 120V 10A 100W
2SD424 NPN TO-3 180V 15A 150W
2SC3058 NPN TO-3 400V 30A 200W
2N6338 NPN TO-3 100V 25A 200W