30N03A MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level UMW
Vds Max
30V
Id Max
90A
Rds(on)
3.9mΩ@10V;6.5mΩ@4.5V
Vgs(th)
1.7V

Quick Reference

The 30N03A is an N-Channel MOSFET in a TO-252 package, manufactured by UMW. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 90A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)90AMax current handling
Power Dissipation (Pd)105WMax thermal limit
On-Resistance (Rds(on))3.9mΩ@10V;6.5mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.7VVoltage required to turn on
Gate Charge (Qg)41nC@10VSwitching energy
Input Capacitance (Ciss)1.963nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRFR8314TR(UMW) N-Channel TO-252 30V 90A 1.6mΩ@10V 1.7V
AP30H150K N-Channel TO-252 30V 150A 4.9mΩ@4.5V 2V
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CMD019N04L N-Channel TO-252 40V 150A 1.6mΩ@10V 2V
PTD40N120 N-Channel TO-252 40V 120A 2.7mΩ@10V 2.2V
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YJD120N04A N-Channel TO-252 40V 120A 2.8mΩ@10V 1V
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DD3R5NG N-Channel TO-252 40V 120A 2.8mΩ@10V 1.5V
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YFW120N04AD N-Channel TO-252 40V 120A 3.2mΩ@10V 2.2V
HB06N047SG N-Channel TO-252 60V 110A 3.7mΩ@10V 1.7V
SP010N04BGTH N-Channel TO-252 100V 120A 5mΩ@10V
6.5mΩ@4.5V
1.7V
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