AP30H150K MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level ALLPOWER
Vds Max
30V
Id Max
150A
Rds(on)
4.9mฮฉ@4.5V
Vgs(th)
2V

Quick Reference

The AP30H150K is an N-Channel MOSFET in a TO-252 package, manufactured by ALLPOWER. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerALLPOWEROriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)62.5WMax thermal limit
On-Resistance (Rds(on))4.9mฮฉ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)54nCSwitching energy
Input Capacitance (Ciss)5.36nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRLR7843TR(UMW) N-Channel TO-252 30V 161A 2.6mฮฉ@10V 2.5V
IRLR7843TRPBF N-Channel TO-252 30V 161A 3.3mฮฉ@10V 2.3V
Infineon ๐Ÿ“„ PDF
IRLR7843TRPBF-JSM N-Channel TO-252 30V 150A - 2.5V
CMD019N04L N-Channel TO-252 40V 150A 1.6mฮฉ@10V 2V
BRCS030N04DP N-Channel TO-252 40V 150A 5mฮฉ@4.5V 2.5V
BLUE ROCKET ๐Ÿ“„ PDF