2SD2391 Datasheet & Equivalents

NPN SOT-89 General Purpose R+O
VCEO
60V
Ic Max
2A
Pd Max
500mW
hFE Gain
390

Quick Reference

The 2SD2391 is a NPN bipolar junction transistor in a SOT-89 package, manufactured by R+O. It supports a breakdown voltage of 60V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)390Base signal amplification ratio
Transition Frequency (fT)210MHzMax operating frequency
Saturation Voltage (VCEsat)350mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+155โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD2391(RANGE:120-270) NPN SOT-89 60V 2A 120 500mW
DXT651 NPN SOT-89 60V 3A 300 1W
DXT651Q-13 NPN SOT-89 60V 3A 300 2W
2STF1360 NPN SOT-89 60V 3A 160 1.4W
2SC5824T100R NPN SOT-89 60V 3A 120 2W
ZXTN2010ZTA-CN NPN SOT-89 60V 4.5A 300 1W
ChipNobo ๐Ÿ“„ PDF
ZXTN2010ZTA NPN SOT-89 60V 5A 55 2.1W
PBSS304 NPN SOT-89 60V 5A 40 2.1W
DXTN26070CY-13 NPN SOT-89 70V 2A 150 2W
D882H-JSM NPN SOT-89 70V 3A 400 500mW
D882H(RANGE:160-320) NPN SOT-89 70V 3A 60 500mW
2SCR544PT100 NPN SOT-89 80V 2.5A 120 2W
ROHM
2SC554SQ NPN SOT-89 100V 2A - 500mW
ZXTN2011ZTA NPN SOT-89 100V 4.5A 100 2.1W