2SC3356 Datasheet & Equivalents

NPN SOT-23 General Purpose LGE
VCEO
12V
Ic Max
100mA
Pd Max
200mW
hFE Gain
120

Quick Reference

The 2SC3356 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by LGE. It supports a breakdown voltage of 12V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)12VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)7GHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)3VMax emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC3356-R25 NPN SOT-23 12V 100mA 120 200mW
MMBTSC3356S NPN SOT-23 12V 100mA 125 200mW
ST(Semtech) ๐Ÿ“„ PDF
2SC3356-R25 NPN SOT-23 12V 100mA 120 200mW
L2SC3356LT1G NPN SOT-23 12V 100mA 82 200mW
2SC3356G-B-AE2-R NPN SOT-23 12V 100mA 160 200mW
2SC3356K R25 NPN SOT-23 12V 100mA 180 200mW
2SC3356 R25 NPN SOT-23 12V 100mA 250 200mW
2SC3356-6AF NPN SOT-23 12V 100mA 250 200mW
2SC3356S NPN SOT-23 12V 100mA 250 200mW
2SC3838KT146P-HXY NPN SOT-23 12V 100mA 250 200mW
HXY MOSFET ๐Ÿ“„ PDF
BF570 NPN SOT-23 15V 100mA 40 250mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 15V 200mA 120 300mW
MMBT2369ALT1G NPN SOT-23 18V 200mA 100 200mW
KTC3880Y NPN SOT-23 25V 100mA 400 200mW
MMBT5089 NPN SOT-23 25V 100mA 1000 200mW
S9014 NPN SOT-23 25V 200mA 120 225mW
MMBT4124LT1G NPN SOT-23 30V 100mA 125 200mW
AD-BC848 NPN SOT-23 30V 100mA 110 225mW
BC848BLT1G NPN SOT-23 30V 100mA 110 225mW
BC848CLT1G NPN SOT-23 30V 100mA 110 225mW