2SC3356-6AF Datasheet & Equivalents

NPN SOT-23 General Purpose FOSAN
VCEO
12V
Ic Max
100mA
Pd Max
200mW
hFE Gain
250

Quick Reference

The 2SC3356-6AF is a NPN bipolar junction transistor in a SOT-23 package, manufactured by FOSAN. It supports a breakdown voltage of 12V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)12VMax breakdown voltage
Collector Current (Ic)100mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)250Base signal amplification ratio
Transition Frequency (fT)7GHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)3VMax emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC3356 R25 NPN SOT-23 12V 100mA 250 200mW
2SC3356S NPN SOT-23 12V 100mA 250 200mW
2SC3838KT146P-HXY NPN SOT-23 12V 100mA 250 200mW
HXY MOSFET ๐Ÿ“„ PDF
2SC3356 NPN SOT-23 12V 100mA 250 200mW
2SC3356 NPN SOT-23 12V 100mA 250 200mW
2SC3356 NPN SOT-23 12V 100mA 300 300mW
2SC3356 NPN SOT-23 12V 100mA 300 200mW
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2SC3356K R25 NPN SOT-23 12V 100mA 180 200mW
2SC3356G-B-AE2-R NPN SOT-23 12V 100mA 160 200mW
MMBTSC3356S NPN SOT-23 12V 100mA 125 200mW
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2SC3356-R25 NPN SOT-23 12V 100mA 120 200mW
2SC3356 NPN SOT-23 12V 100mA 120 200mW
2SC3356-R25 NPN SOT-23 12V 100mA 120 200mW
L2SC3356LT1G NPN SOT-23 12V 100mA 82 200mW
2SC3356 NPN SOT-23 12V 100mA 50 200mW
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BF570 NPN SOT-23 15V 100mA 40 250mW
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215 NPN SOT-23 15V 200mA 120 300mW
MMBT2369ALT1G NPN SOT-23 18V 200mA 100 200mW
KTC3880Y NPN SOT-23 25V 100mA 400 200mW
MMBT5089 NPN SOT-23 25V 100mA 1000 200mW