2SB1386 Datasheet & Equivalents
PNP
SOT-89
General Purpose
LGE
VCEO
20V
Ic Max
5A
Pd Max
500mW
hFE Gain
230
Quick Reference
The 2SB1386 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by LGE. It supports a breakdown voltage of 20V and continuous collector current of 5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LGE | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 20V | Max breakdown voltage |
| Collector Current (Ic) | 5A | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| DC Current Gain (hFE) | 230 | Base signal amplification ratio |
| Transition Frequency (fT) | 120MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| 2SB1386T100R | PNP | SOT-89 | 20V | 5A | 180 | 500mW | ROHM 📄 PDF |
| 2SB1386-JSM | PNP | SOT-89 | 20V | 5A | 390 | 500mW | JSMSEMI 📄 PDF |
| 2SAR542PFRAT100 | PNP | SOT-89 | 30V | 5A | 200 | 2W | ROHM 📄 PDF |
| 2SAR542PT100 | PNP | SOT-89 | 30V | 5A | 200 | 2W | ROHM 📄 PDF |
| PBSS303PX | PNP | SOT-89 | 30V | 5.1A | 200 | 2.1W | Nexperia 📄 PDF |
| 115 | PNP | SOT-89 | 30V | 5.5A | 70 | 12W | DIODES 📄 PDF |
| ZXTP2008ZTA | PNP | SOT-89 | 40V | 5.5A | 200 | 3W | DIODES 📄 PDF |
| ZX5T3ZTA | PNP | SOT-89 | 50V | 7A | 200 | 3.5W | onsemi 📄 PDF |